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STC8550 参数 Datasheet PDF下载

STC8550图片预览
型号: STC8550
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 60 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
 浏览型号STC8550的Datasheet PDF文件第2页  
S
0
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8050
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=2W (T
C
=25°C)
STC8550
PNP Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-40
-40
-6
-1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -1V, I
C
= -5mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
= -800mA, I
B
= -80mA
V
CE
= -1V, I
C
= -10mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -50mA
100
45
85
40
170
160
80
-0.28
-0.98
-0.66
15
200
Min.
-40
-40
-6
-100
-100
300
-0.5
-1.2
-1.0
V
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE2
A
85 ~ 160
B
120 ~ 200
C
200 ~ 400