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2N7000 参数 Datasheet PDF下载

2N7000图片预览
型号: 2N7000
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS FET [N-Channel Enhancement-Mode Vertical DMOS FET]
分类和应用: 晶体晶体管开关
文件页数/大小: 4 页 / 30 K
品牌: SUPERTEX [ Supertex, Inc ]
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2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
5.0Ω
I
D(ON)
(min)
75mA
Order Number / Package
TO-92
2N7000
Features
s
Free from secondary breakdown
s
Low power drive requirement
s
Ease of paralleling
s
Low C
ISS
and fast switching speeds
s
Excellent thermal stability
s
Integral Source-Drain diode
s
High input impedance and high gain
s
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
s
Motor controls
s
Converters
s
Amplifiers
s
Switches
s
Power supply circuits
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BV
DSS
BV
DGS
±
30V
-55°C to +150°C
300°C
SGD
TO-92
7-5