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DN1509N8-G 参数 Datasheet PDF下载

DN1509N8-G图片预览
型号: DN1509N8-G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS FET [N-Channel Depletion-Mode Vertical DMOS FET]
分类和应用:
文件页数/大小: 3 页 / 364 K
品牌: SUPERTEX [ Supertex, Inc ]
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DN1509
N-Channel Depletion-Mode Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakages
General Description
The Supertex DN1509 is suitable for high voltage transient
protection for LDO in automobile applications during “load
dump” conditions.
This low threshold, depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Normally-on switches
Battery operated systems
Converters
Linear amplifiers
Constant current sources
Telecom
Ordering Information
Device
DN1509
Package Option
TO-243AA (SOT-89)
DN1509N8-G
Product marking for TO-243AA:
BV
DSX
/BV
DGX
90V
R
DS(ON)
(max)
6.0Ω
I
DSS
(typ)
540mA
where
DN5A
= 2-week alpha date code
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSX
BV
DGX
±20V
-55°C to +150°C
+300°C
Pin Configuration
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
G
D
(Top View)
S
TO-243AA (SOT-89)