DN2535
Thermal Characteristics
ID
ID
(1)
Power Dissipation
Θjc
Θja
IDR
IDRM
(mA)
(continuous)1
(mA)
(pulsed)
(mA)
Package
@TC = 25OC (W)
(OC/W)
(OC/W)
(mA)
TO-92
120
500
500
500
1.0
15
125
8.3
170
70
120
500
500
500
TO-220
Notes:
(1) ID (continuous) is limited by max rated Tj.
Electrical Characteristics (TA @ 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units Conditions
BVDSX
Drain-to-source breakdown voltage
350
-
-
-
-
-
-
V
V
VGS = -5.0V, ID = 100µA
VDS = 25V, ID = 10µA
VGS(OFF) Gate-to-source OFF voltage
-1.5
-3.5
4.5
100
10
ΔVGS(OFF) Change in VGS(OFF) with temperature
-
-
-
mV/OC VDS = 25V, ID = 10µA
IGSS
Gate body leakage current
nA
µA
VGS = 20V, VDS = 0V
VDS = Max rating, VGS = -10V
ID(OFF)
Drain-to-source leakage current
VDS = 0.8 Max Rating,
-
-
1.0
mA
VGS = -10V, TA = 125OC
IDSS
Saturated drain-to-source current
150
-
-
25
1.1
-
mA
Ω
%/OC
VGS = 0V, VDS = 25V
VGS = 0V, ID = 120mA
VGS = 0V, ID = 120mA
RDS(ON)
Static drain-to-source ON-state resistance
-
-
-
-
-
-
-
-
-
-
-
-
17
ΔRDS(ON) Change in RDS(ON) with temperature
-
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
325
mmho VDS = 10V, ID = 100mA
200
300
30
5
VGS = -10V,
VDS = 25V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
12
pF
ns
1
-
10
15
15
20
1.8
-
VDD = 25V,
ID = 150mA,
RGEN = 25Ω,
Rise time
-
td(OFF)
tf
Turn-OFF delay time
Fall time
-
-
-
VSD
trr
Diode forward voltage drop
Reverse recovery time
V
VGS = -10V, ISD = 120mA
VGS = -10V, ISD = 1.0A
800
ns
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
VDD
RL
Switching Waveforms and Test Circuit
0V
90%
INPUT
PULSE
GENERATOR
10%
-10V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tr
tF
VDD
0V
D.U.T.
10%
10%
INPUT
OUTPUT
90%
90%
2
SUPERTEX [ Supertex, Inc ]
