DN3765
N-Channel Depletion-Mode
Vertical DMOS FET
Features
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High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
This depletion-mode (normally-on) transistor utilizes an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Telecom
Ordering Information
BV
DSX
/
BV
DGX
(V)
Pin Configuration
Package Option
TO-252 (D-PAK)
DN3765K4-G
SOURCE
GATE
DRAIN
R
DS(ON)
max
(Ω)
I
DSS
min
(mA)
650
8.0
200
-G indicates package is RoHS compliant (‘Green’)
TO-252 (D-PAK) (K4)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Maximum junction temperature
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
150
O
C
Product Marking
YYWW
DN3765
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
TO-252 (D-PAK) (K4)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
SUPERTEX [ Supertex, Inc ]
