HV256
R
SINK
/ R
SOURCE
The V
DD_BYP
,V
DD_BYP
,and V
NN_BYP
pins are internal. high impedance
current. mirror gate nodes, brought out to mantain stable opamp
biasing currents in noisy power supply environments. 0.1uF/25V
bypass capacitors, added from V
PP_BYP
pin to V
PP
, from V
DD_BYP
pin
to V
DD
, and from V
NN_BYP
to V
NN
,will force the high impedance gate
V
PP
B
YP
_V
PP
Cap
0.1uF / 25V
B
YP
_V
PP
B
YP
_V
DD
B
YP
_V
DD
Cap
0.1uF / 25V
V
DD
B
YP
_V
NN
B
YP
_V
NN
Cap
0.1uF / 25V
V
NN
Current limit
Set by R
SINK
Current limit
nodes to follow fluctuation of power lines. The expected voltages
at the V
DD_BYP
, and V
NN_BYP
pins are typically 1.5 volts from their
respectful power supply. The expected voltage at V
PP_BYP
is typically
3V below V
PP
.
Set by R
SOURCE
To internal biasing
HV
OUT
0
HV
OUT
31
HVOpamp
HVOpamp
Typical Characteristics
I
SINK vs
R
SINK
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V, T
A
= 25 C)
O
I
SOURCE vs
R
SOURCE
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V, T
A
= 25
O
C)
600
600
500
500
400
I
SOURCE
(µA)
400
300
I
SINK
(µA)
300
200
200
100
max
min
max
100
min
0
25k
150k
250k
0
25k
150k
250k
R
SOURCE
(KΩ)
R
SINK
(KΩ)
5
SUPERTEX [ Supertex, Inc ]
