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LND150 参数 Datasheet PDF下载

LND150图片预览
型号: LND150
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型MOSFET [N-Channel Depletion-Mode MOSFET]
分类和应用:
文件页数/大小: 4 页 / 89 K
品牌: SUPERTEX [ Supertex, Inc ]
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LND150
Typical Performance Curves
BV
DSS
Variation with Temperature
1.4
1.1
I
D
vs. R
SOURCE
I
D
LND1
R
SOURCE
V
GS
= -5V
1.2
25°C
BV
DSS
(normalized)
1.0
125°C
I
D
(milliamps)
0.8
0.6
0.4
0.2
1.0
0.9
-50
0
50
100
150
0.0
10
100
1K
10K
100K
T
j
(°C)
Transfer Characteristics
10
R
SOURCE
(ohms)
V
GS(OFF)
and R
DS
Variation with Temperature
1.8
2.0
V
DS
= 400V
1.6
V
GS(OFF)
(normalized)
I
D
(milliamps)
T
A
= 25°C
5
1.6
T
A
= 125°C
1.4
1.2
1.2
0.8
1.0
V
GS(OFF)
@ 100nA
0.4
0
0.8
-1
0
1
2
3
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
10
10
T
j
(°C)
Gate Drive Dynamic Characteristics
V
GS
= -10V
C
ISS
8.7pF
5
C (picofarads)
V
GS
(volts)
V
DS
= 20V
40V
60V
5
0
C
OSS
C
RSS
0
0
10
20
30
40
-5
0
0.1
0.2
0.3
V
DS
(volts)
Q
C
(nanocoulombs)
12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
T
A
= -55°C
R
DS(ON)
@ I
D
= 1mA