TC1550
N- and P-Channel
Enhancement-Mode Dual MOSFET
Features
►
►
►
►
►
►
►
500V breakdown voltage
Independent N- and P-channels
Electrically isolated N- and P-channels
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
General Description
The Supertex TC1550TG-G consists of a high voltage N-
channel and P-channel MOSFET in an SO-8 package.
These are enhancement-mode (normally-off) transistors
utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Typical Application Circuit
+250V
+12V
V
DD
1
OE
3.3V CMOS
Logic Inputs
INA
OUTA
10nF
250V
10nF
250V
Piezoelectric
Transducer
V
DD
2
V
H
0.47µF
15V
INB
OUTB
GND V
SS
1 V
SS
2 V
L
15V
-250V
Supertex
MD1210K6
Supertex
TC1550TG
SUPERTEX [ Supertex, Inc ]
