TC6320
N- and P- Channel Enhancement-Mode Dual MOSFET
Features
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Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Freedom from secondary breakdown
Low input and output leakage
Independent, electrically isolated N- and P-
channels
General Description
The Supertex TC6320 consists of high voltage low
threshold N-channel and P-channel MOSFETs in an SO-
8 package. Both MOSFETs have integrated gate-source
resistors and gate-source zener diode clamps which are
desired for high voltage pulser applications. The TC6320 is
a complimentary, high-speed, high voltage, gate-clamped
N- and P-channel MOSFET pair in an SO-8 package.
These low threshold enhancement-mode (normally-off)
transistors utilize an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces devices with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
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Medical ultrasound transmitters
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Ordering Information
Device
TC6320
Package Options
8-Lead SOIC (Narrow Body)
TC6320TG
TC6320TG-G
BV
DSS
/BV
DGS
N-Channel
200V
P-Channel
-200V
R
DS(ON)
(MAX)
N-Channel
7.0Ω
P-Channel
8.0Ω
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
S1
1
2
3
4
P-Channel
N-Channel
8
7
6
5
D1
D1
D2
D2
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
-55°C to +150°C
+300°C
G1
S2
G2
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
SO-8 Package
(top view)
SUPERTEX [ Supertex, Inc ]
