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TN2124K1-G 参数 Datasheet PDF下载

TN2124K1-G图片预览
型号: TN2124K1-G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS FET [N-Channel Enhancement-Mode Vertical DMOS FET]
分类和应用: 晶体晶体管开关光电二极管PC
文件页数/大小: 5 页 / 566 K
品牌: SUPERTEX [ Supertex, Inc ]
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TN2124
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
BV
DSS
/BV
DGS
(V)
Pin Configuration
Package Option
TO-236AB (SOT-23)
TN2124K1-G
R
DS(ON)
max
(Ω)
V
GS(th)
max
(V)
DRAIN
240
15
2.0
-G indicates package is RoHS compliant (‘Green’)
SOURCE
GATE
TO-236AB (SOT-23) (K1)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
Product Marking
N1CW
W = Code for week sealed
TO-236AB (SOT-23) (K1)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.