SUPERTEX Enhancement & Depletion Mode MOSFETs
This page of product is compliant.
MOSFETs
SOIC-8
SOIC-8 (Narrow)
SOT-23-3
SOT-89-3
TO-92
TO-220
TO-252
♦
Surface Mount Device
SUPERTEX N-CHANNEL ENHANCEMENT-MODE MOSFETS (CONT.)
†
Low Threshold
Turn-ON/ Turn-OFF
Delay
Time
t
(ON)
Max. (ns)
8
7
15
20
20
15
10
20
20
20
20
20
15
15
20
20
10
10
10
10
10
t
(OFF)
Max. (ns)
23
10
90
25
25
35
12
65
25
25
40
65
25
25
25
25
25
25
10
25
25
For quantities 2000 and up, call for quote.
Supertex
MOUSER
STOCK NO.
Supertex
Part No.
Package
Type
Drain-to-Source
Breakdown
Voltage
BV
DSS
Min. (V)
Gate
Threshold
Voltage
V
GS(th)
Min. (V) Max. (V)
0.8
0.8
1
0.6
0.6
0.8
0.8
0.6
1
0.6
0.8
0.6
0.8
0.8
0.6
0.6
1.5
1.5
2
1.5
1.5
2
2
3
2
2
2.4
2.4
1.8
2
2
2.4
1.8
2
2
2
2
4
4
4
4
4
Drain-to-Source ON-State
Input
ON-State
Drain
Capacitance
Resistance
Current
R
DS(ON)
Max. (Ω)
10
15
1.25
7
7
3.5
25
15
10
15
6
12
5
5
12
12
13
13
60
20
20
I
D(ON)
Min. (A)
1
0.14
5
1.2
1.2
0.8
0.25
0.15
1
0.75
1
0.15
2
2
1
1
0.5
0.5
0.15
0.25
0.25
C
ISS
(pF)
125
38
300
70
110
105
35
110
125
65
200
110
180
180
95
95
150
150
45
150
150
Power
Dissipation
@ TA=25°C
(W)
1
0.36
1
0.74
0.74
1.6
0.36
1
1.6
0.36
1.6
1
1.3
1
1
1.6
1
1.6
1
1
1.6
1
.63
.46
2.07
.40
.36
.86
.46
.97
.86
.53
.89
1.06
1.29
1.03
.84
.89
.97
1.03
.99
.82
.82
Price Each
100
.52
.38
1.72
.33
.30
.71
.38
.81
.71
.44
.74
.88
1.07
.85
.70
.74
.81
.85
.82
.68
.68
500
.48
.35
1.59
.31
.28
.66
.35
.74
.66
.41
.69
.82
.99
.79
.64
.69
.74
.79
.76
.63
.63
1000
.46
.34
1.53
.29
.27
.63
.34
.71
.63
.39
.66
.78
.95
.76
.62
.66
.71
.76
.73
.60
.60
†
♦
†
♦
†
♦
†
†
♦
♦
†
♦
†
†
♦
†
†
♦
†
†
♦
♦
♦
VN2410L-G
TO-92
TN2124K1-G SOT-23-3
VN2224N3-G
TO-92
TN5325N3-G
TO-92
TN5325K1-G SOT-23-3
TN2425N8-G SOT-89-3
TN2130K1-G SOT-23-3
VN3515L-G
TO-92
TN2535N8-G SOT-89-3
TN5335K1-G SOT-23-3
TN2435N8-G SOT-89-3
VN4012L-G
TO-92
TN2640LG-G SOIC-8 (N)
TN2640N3-G
TO-92
TN2540N3-G
TO-92
TN2540N8-G SOT-89-3
VN2450N3-G
TO-92
VN2450N8-G SOT-89-3
VN0550N3-G
TO-92
VN2460N3-G
TO-92
VN2460N8-G SOT-89-3
240
240
240
250
250
250
300
350
350
350
350
400
400
400
400
400
500
500
500
600
600
SUPERTEX N & P-CHANNEL ENHANCEMENT-MODE MOSFETS
♦
♦
TC2320TG-G
TC6320TG-G
SOIC-8
SOIC-8
200/-200
200/-200
0.6/-1.0 2.0/-2.4
1.0/-1.0 2.0/-2.4
7/12
7/8
1.0/-0.2
1.0/-1.0
110/125
110/200
20/10
10/10
25/20
20/20
For quantities 2000 and up, call for quote.
-----
-----
1.77
1.86
1.47
1.55
1.36
1.43
1.30
1.37
SUPERTEX DEPLETION MODE N-CHANNEL MOSFETS
Advanced Vertical DMOS Technology N-Channel Depletion Mode Vertical DMOS FETs
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structure, these devices are free from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features:
•
•
•
High input impedance
Low input capacitance
Fast switching speeds
•
•
•
Applications:
Low on resistance
Free from secondary breakdown
Low input and output leakage
•
•
•
Normally-on switches
Solid state relays
Converters
•
•
•
Constant current sources
Power supply circuits
Telecom
For quantities 2000 and up, call for quote.
MOUSER
STOCK NO.
Supertex
Part No.
Package
Type
Drain-to-Source Drain-to-Source
Drain-to-Source
Breakdown
ON-State
Current
Voltage
Resistance
BV
DSX
Min. (V)
R
DS(ON)
Max. (Ω)
6
10
25
60
20
20
I
DSS
Min. (mA)
300
200
150
120
200
200
Gate-to-Source
OFF Voltage
V
GS(OFF)
Min. (V)
-1.5
-1.5
-1.5
-1.5
-1.5
-1.5
Max. (V)
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
Reverse
Power
Recovery
Dissipation
Time
T
rr
TYP (ns)
800
800
800
800
800
800
@TA=25°C
(W)
1.6
1.6
15
1.3
.74
1.6
1
.80
.82
1.60
.82
.82
.89
Price Each
100
.66
.68
1.33
.68
.68
.74
500
.61
.63
1.23
.63
.63
.69
1000
.59
.60
1.18
.60
.60
.66
♦
♦
♦
♦
DN3525N8-G
DN3535N8-G
DN2540N5-G
DN3145N8-G
DN3545N3-G
DN3545N8-G
SOT-89-3
SOT-89-3
TO-220
SOT-89-3
TO-92
SOT-89-3
250
350
400
450
450
450
Advanced Lateral DMOS Technology N-Channel Depletion Mode MOSFETs
The LND1 and LND2 are high voltage N-channel depletion-mode (normally-on)
transistors utilizing Supertex’s lateral DMOS technology. The gate is ESD protected.
The LND1 and LND2 are ideal for high voltage applications in the areas of normally-on
switches, precision constant current sources, voltage ramp generation and
amplification.
Features:
Applications:
•
•
•
•
High input impedance and low CISS
Low power drive requirement
ESD gate protection
Ease of paralleling
•
•
•
Free from secondary breakdown
Excellent thermal stability
Integral source-drain diode
•
•
•
200
200
200
Normally-on switches
Solid state relays
Converters
•
•
•
Constant current sources
Power supply circuits
Input protection circuits
For quantities 2000 and up, call for quote.
♦
♦
LND150N3-G
LND150N8-G
LND250K1-G
TO-92
SOT-89-3
SOT-23-3
500
500
500
1000
1000
1000
1
1
1
-1
-1
-1
-3
-3
-3
.74
1.6
.36
.55
.72
.46
.46
.60
.38
.42
.55
.35
.41
.53
.34
SUPERTEX N-CHANNEL IGBT (INSULATED GATE BIPOLAR TRANSISTOR) MOSFET
For quantities 2000 and up, call for quote.
MOUSER
STOCK NO.
Supertex
Part No.
Package
Type
Collector
Emitter
Breakdown
Voltage
Min. (V)
700
Collector
Current
Max. (A)
1
Power
Dissipation
@25°C
Max. (W)
2.5
Gate Threshold
Voltage
Min. (V)
1.5
Max. (V)
3.5
Delay Time
Min. (V)
15
Max. (V)
50
Rise/Fall
Times
Max. (ns)
600/12000
1
.84
Price Each
100
.70
500
.64
1000
.62
♦
© Copyright 2007 Mouser Electronics
GN2470K4-G
TO-252
© Copyright 2007 Mouser Electronics
448
(800) 346-6873
SUPERTEX [ Supertex, Inc ]
