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TN2425TG 参数 Datasheet PDF下载

TN2425TG图片预览
型号: TN2425TG
PDF下载: 下载PDF文件 查看货源
内容描述: 低门槛双N沟道增强模式 [Low Threshold Dual N-Channel Enhancement-Mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 5 页 / 412 K
品牌: SUPERTEX [ Supertex, Inc ]
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TN2425TG
Low Threshold Dual N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Dual N-channel device
Low threshold – 2.0V max.
High input impedance
Low input capacitance – 200pF
Fast switching speeds
Low caps ON resistance
Free from secondary breakdown
Low input and output leakage
General Description
The Supertex TN2425TG is a dual low threshold
enhancement mode (normally off) transistor utilizing
a vertical DMOS structure and Supertex’s well proven
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors, with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Medical ultrasound pulsers
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2425TG
Package Option
8-Lead SOIC (Narrow Body)
TN2425TG
BV
DSS
/BV
DGS
250V
R
DS(ON)
(max)
3.5Ω
V
GS(th)
(max)
2.0V
I
D(ON)
(min)
1.8A
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Thermal resistance,
Junction to drain lead
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
±20V
50°C/W
Pin Configuration
S1
1
8
D1
G1
2
7
D1
S2
-55°C to +150°C
+300°C
3
6
D2
G2
4
5
D2
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
8-Lead SOIC
(top view)