TN2540
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
50
On-Resistance vs. Drain Current
40
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
V
GS
= 10V
30
1.0
20
10
0.9
-50
0
50
100
150
0
0
0.4
0.8
1.2
1.6
2.0
T
j
(
°
C)
Transfer Characteristics
1.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.5
V
DS
= 25V
1.2
1.4
R
DS(ON)
@ 10V, 0.5A
2.0
1.2
I
D
(amperes)
T
A
= -55
°
C
0.9
1.5
1.0
1.0
0.8
0.5
0.6
0
0.6
25
°C
0.3
125°C
0
2
4
6
8
10
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C (picofarads)
V
GS
(volts)
6
100
C
ISS
4
V
DS
= 40V
260 pF
50
2
C
RSS
0
0
10
20
30
C
OSS
0
40
0
95pF
0.4
0.8
1.2
1.6
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
5
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
V
(th)
@ 1mA
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