TP2522
P-Channel Enhancement Mode
Vertical DMOS FETs
Features
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Low threshold — -2.4V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N and P-channel devices
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Applications
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Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
BV
DSS
/BV
DGS
(V)
R
DS(ON)
max
(Ω)
V
GS(th)
max
(V)
I
D(ON)
min
(A)
Package Options
TO-243AA (SOT-89)
TP2522N8-G
Die*
TP2522ND
-220
12
-2.4
-0.75
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
300°C
GATE
SOURCE
DRAIN
TO-243AA (SOT-89) (N8)
Product Marking
TP5CW
W = Code for week sealed
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
* Distance of 1.6 mm from case for 10 seconds.
TO-243AA (SOT-89) (N8)
SUPERTEX [ Supertex, Inc ]
