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TP2522 参数 Datasheet PDF下载

TP2522图片预览
型号: TP2522
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型垂直DMOS场效应管 [P-Channel Enhancement-Mode Vertical DMOS FETs]
分类和应用:
文件页数/大小: 4 页 / 457 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号TP2522的Datasheet PDF文件第1页浏览型号TP2522的Datasheet PDF文件第2页浏览型号TP2522的Datasheet PDF文件第3页  
TP2520/TP2522
Typical Performance Curves
BV
DSS
Variation with Temperature
50
1.1
40
On-Resistance vs. Drain Current
BV
DSS
(normalized)
V
GS
= -4.5V
R
DS(ON)
(ohms)
30
1.0
20
V
GS
= -10V
10
0.9
0
-50
0
50
100
150
0
-0.5
-1.0
-1.5
-2.0
-2.5
T
j
(°C)
Transfer Characteristics
-2.5
1.2
-2.0
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.5
V
DS
= -25V
V
GS(th)
(normalized)
2.0
25°C
1.1
-1.5
1.5
1.0
125°C
-1.0
V
(th)
@ -1mA
1.0
0.9
0.5
0.8
-0.5
0
0
-2
-4
-6
-8
-10
-50
0
50
100
150
0
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
-10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
-8
150
V
DS
= -10V
C (picofarads)
V
GS
(volts)
-6
100
V
DS
= -40V
-4
C
ISS
50
200pF
-2
C
RSS
0
0
-10
-20
-30
C
OSS
0
-40
0
73pF
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
T
A
= -55°C
I
D
(amperes)
R
DS(ON)
@ -10V, -0.2A