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TP2540 参数 Datasheet PDF下载

TP2540图片预览
型号: TP2540
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型垂直DMOS场效应管 [P-Channel Enhancement-Mode Vertical DMOS FETs]
分类和应用:
文件页数/大小: 4 页 / 481 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号TP2540的Datasheet PDF文件第1页浏览型号TP2540的Datasheet PDF文件第3页浏览型号TP2540的Datasheet PDF文件第4页  
TP2535/TP2540
Thermal Characteristics
Package
TO-92
TO-243AA
I
D
(continuous)*
-86mA
-125mA
I
D
(pulsed)
-0.6A
-1.2A
Power Dissipation
@ T
A
= 25
°
C
0.74W
1.6W
θ
jc
°
C/W
125
15
θ
ja
°
C/W
170
78
I
DR
*
-86mA
-125mA
I
DRM
-0.6A
-1.2A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
TP2540
TP2535
Min
-400
-350
-1.0
-2.4
4.8
-100
-10
-1.0
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
100
175
60
20
10
125
70
25
10
10
20
13
-1.8
V
ns
V
GS
= 0V, I
SD
= -100mA
V
GS
= 0V, I
SD
= -100mA
ns
V
DD
= -25V
I
D
= -0.4A
R
GEN
= 25Ω
pF
-0.2
-0.4
-0.3
-1.1
20
19
30
25
0.75
%/°C
m
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= -2mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -100mA
V
GS
= -10V, I
D
= -100mA
V
DS
= -25V, I
D
= -100mA
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
D.U.T.
OUTPUT
R
L
V
DD