TP5322
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
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High input impedance
Low threshold
Low input capacitance
Fast switching speeds
Low on resistance
Low input and output leakage
Free from secondary breakdown
Complementary N- and P-channel devices
General Description
The Supertex TP5322 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Logic level interfaces - ideal for TTL and CMOS
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Package Options
TO-236AB
1
TP5322K1
TP5322K1-G
TO-243AA
2
TP5322N8
TP5322N8-G
BV
DSS
/BV
DGS
-220V
R
DS(ON)
(max)
12Ω
V
GS(TH)
(max)
-2.4V
I
D(ON)
(min)
-0.7A
-G indicates package is RoHS compliant (‘Green’)
Notes:
1
Same as SOT-23,
2
Same as SOT-89.
Product marking for TO-236AB:
P3C
where
= 2-week alpha date code
Product marking for TO-243AA:
TP3C
where
= 2-week alpha date code
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
3
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
Pin Configurations
Drain
D
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
3
Distance of 1.6mm from case for 10 seconds.
Gate
Source
G
D
S
TO-236AB
(Top View)
TO-243AA
(top view)
SUPERTEX [ Supertex, Inc ]
