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TP5335K1-G 参数 Datasheet PDF下载

TP5335K1-G图片预览
型号: TP5335K1-G
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型垂直DMOS FET [P-Channel Enhancement-Mode Vertical DMOS FET]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 3 页 / 397 K
品牌: SUPERTEX [ Supertex, Inc ]
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TP5335
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Complementary N- and P-channel devices
General Description
The Supertex TP5335 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Analog switches
Power management
Telecom switches
Ordering Information
BV
DSs
/
BV
DGs
-350V
R
DS(ON)
(max)
Pin Configuration
Package Options
TO-236AB
TP5335K1
TP5335K1-G
Drain
V
GS(TH)
(max)
30Ω
-2.4V
-G indicates package is RoHS compliant (‘Green’)
Gate
Source
TO-236AB
(Top View)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
Product Marking Information
Product marking for SOT-23:
P3S
where = 2-week alpha date code
Underline indicates Pb-Free (”Green”)
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.