VN0104/VN0106
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
350mA
I
D
(pulsed)
2.0A
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
350mA
I
DRM
2.0A
* I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
VN0106
VN0104
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
60
V
40
0.8
-3.8
2.4
-5.5
100
1
100
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
0.5
2.0
1.0
2.5
3.0
2.5
0.70
450
55
20
5
3
5
6
5
1.2
400
65
25
8
5
8
9
8
1.8
V
ns
ns
V
DD
= 25V
I
D
= 1A
R
GEN
= 25Ω
V
GS
= 0V, I
SD
=1.0A
V
GS
= 0V, I
SD
=1.0A
pF
5.0
3.0
1
Ω
%/°C
m
µA
V
mV/°C
nA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 250mA
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 0.5A
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
GS
= 0V, I
D
= 1mA
Typ
Max
Unit
Conditions
A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
R
L
OUTPUT
D.U.T.
SUPERTEX [ Supertex, Inc ]
