–
TE
VP0120
SOLE
– OB
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
-200V
†MIL
visual screening available
R
DS(ON)
(max)
25Ω
I
D(ON)
(min)
-100mA
Order Number / Package
TO-92
VP0120N3
Die
†
VP0120ND
7
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
■
Free from secondary breakdown
■
Low power drive requirement
■
Ease of paralleling
■
Low C
ISS
and fast switching speeds
■
Excellent thermal stability
■
Integral Source-Drain diode
■
High input impedance and high gain
■
Complementary N- and P-channel devices
9
Applications
■
Motor controls
■
Converters
■
Amplifiers
■
Switches
■
Power supply circuits
■
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
7-223
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
SGD
TO-92
Note: See Package Outline section for dimensions.
SUPERTEX [ Supertex, Inc ]
