VN2222/VN2224
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
540mA
I
D
(pulsed)
5.0A
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
540mA
I
DRM
5.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
VN2224
VN2222
Min
240
220
1.0
-4
1
3.0
-5
100
50
5
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 5mA
V
GS
= V
DS
, I
D
= 5mA
V
GS
= V
DS
, I
D
= 5mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 2A
V
GS
= 10V, I
D
= 2A
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
ON-State Drain Current
2
5
10
1.0
0.9
1.0
1.0
2.2
300
85
20
6
16
65
30
0.8
500
350
150
35
15
25
90
60
1.0
1.5
1.25
1.4
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Ω
%/°C
pF
ns
V
ns
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
= 25V
I
D
= 2A
R
GEN
= 10Ω
V
GS
= 0V, I
SD
= 100mA
V
GS
= 0V, I
SD
= 1A
V
DD
R
L
OUTPUT
D.U.T.
SUPERTEX [ Supertex, Inc ]
