Supertex inc.
VP0104/VP0106/VP0109
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
-40V
-60V
-90V
R
DS(ON)
(max)
8.0Ω
8.0Ω
8.0Ω
I
D(ON)
(min)
-0.5A
-0.5A
-0.5A
Order Number / Package
TO-92
VP0104N3
VP0106N3
VP0109N3
Features
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Ease of paralleling
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
Integral Source-Drain diode
❏
High input impedance and high gain
❏
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Motor controls
❏
Converters
❏
Amplifiers
❏
Switches
❏
Power supply circuits
❏
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
±
20V
-55
o
C to +150
o
C
300
o
C
SGD
TO-92
Note: See Package Outline section for dimensions.
Supertex inc.
·
1235 Bordeaux Drive, Sunnyvale, CA 94089
·
Tel: (408) 222-8888
·
FAX: (408) 222-4895
·
www.supertex.com
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