ETE –
VP0645
SOL
B
–O
VP0650
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
-450V
-500V
†
R
DS(ON)
(max)
30Ω
30Ω
I
D(ON)
(min)
-0.2A
-0.2A
Order Number / Package
TO-39
VP0645N2
—
TO-92
—
VP0650N3
TO-220
—
VP0650N5
Die
†
VP0645ND
VP0650ND
MIL visual screening available
7
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
■
Free from secondary breakdown
■
Low power drive requirement
■
Ease of paralleling
■
Low C
ISS
and fast switching speeds
■
Excellent thermal stability
■
Integral Source-Drain diode
■
High input impedance and high gain
■
Complementary N- and P-channel devices
9
Package Options
Applications
■
Motor controls
■
Converters
■
Amplifiers
■
Switches
■
Power supply circuits
■
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
G D
S
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
7-245
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
DGS
TO-220
TAB: DRAIN
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.