DB3M.DB4M
SILICON BIDIRECTIONAL DIACS
FEATURES
The three layer,two termnal,hermetically sealed diacs
are designed specifically for triggering thyristors.
They demonstrate low break over current at break
over voltage as they withstand peak pulse current,
The breakover symmetry is within three volts(DB6).
These diacs are intended for use in thyrisitors
phase control,circuits for lamp dimming,universal
motor speed control,and heat control.
VOLTAGE RANGE: 28-45 V
MINI-MELF
Cathode indification
φ
.5±0.1
1
3.4
+0.3
-0.1
0.4±0.1
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3M,DB4M
UNITS
Power dissipation on printed
T
A
=50
o
C
Repetitive peak on-state
current
tp=20 S
f=120Hz
Pc
150.0
mW
I
TRM
T
J
T
STG
2.0
-40--- +125
-40--- +125
A
o
o
Operating junction temperature
Storage temperature
C
C
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
Min
Breakover voltage
(NOTE
1)
V
BO
I+V
BO
I-
I-V
BO
I
I±
VI
V
o
I
BO
t
r
I
R
C=22nf
(NOTE 2)
See FIG.1
C=22nf
(NOTE 2)
See FIG.1
I=(I
BO
to I
F
=10mA)
See FIG.1
See FIG.2
C=22nf
(NOTE 2)
See FIG.3
V
R
=0.5 V
BO
See FIG.1
DB3M
28
32
36
±3.0
DB4M
35
40
45
UNITS
Typ
Max
V
Breakover voltage symmetry
Dynamic breakover voltage
(NOTE 1)
Output voltage
(NOTE 1)
Breakover current
(NOTE 1)
Rise time
(NOTE 1)
Leakage current
(NOTE 1)
Max
Min
Min
Max
Typ
Max
V
V
V
A
S
A
5.0
5.0
100.0
1.5
10.0
NOTE:
1.
Electrical characteristics applicable in both forw ard and reverse dirctions.
2.
Connected in parallel w ith the devices
SY [ CHANGZHOU SHUNYE ELECTRONICS CO.,LTD. ]
