SPC4539
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±20V
V
DS
=0V,V
GS
=±20V
V
DS
= 24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V T
J
=55℃
V
DS
=-24V,V
GS
=0V T
J
=55℃
V
DS
≥
5V,V
GS
= 10V
V
DS
≤
-5V,V
GS
=-10V
V
GS
= 10V,I
D
= 6.8A
V
GS
=-10V,I
D
=-5.7A
V
GS
= 4.5V,I
D
= 5.6A
V
GS
=-4.5V,I
D
=-4.4A
V
DS
= 15V,I
D
=-5.9A
V
DS
=-15V,I
D
=-5.0A
I
S
= 1.7A,V
GS
=0V
I
S
=-1.7A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
1.0
-1.0
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
3.0
-3.0
±100
±100
1
-1
5
-5
0.026
0.045
0.036
0.060
15
9
0.8
-0.8
13
15
2.3
4
2
2
6
7
14
10
30
40
5
20
0.034
0.060
0.046
0.080
1.2
-1.2
20
25
V
nA
uA
A
Ω
S
V
30
-30
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
gfs
V
SD
N-Channel
V
DS
= 15V,V
GS
= 10V , I
D
= 5.9A
P-Channel
V
DS
=-15V,V
GS
=-10V , I
D
= -5.0A
nC
N-Channel
V
DD
=15V,R
L
=15Ω
I
D
≡1.0A,V
GEN
=10V R
G
=6Ω
P-Channel
V
DD
=-15V,R
L
=15Ω
I
D
≡-1.0A,V
GEN
=-10V R
G
=6Ω
12
15
25
20
60
80
10
40
nS
2007/04/25
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
