SPC4703
P-Channel Trench MOSFET with Schottky Diode
DESCRIPTION
The SPC4703combines the Trench MOSFET technology
with a very low forward voltage drop Schottky barrier
rectifier in an DFN3X2-8L package. The Trench
MOSFET is the P-Channel enhancement mode power
field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
The Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch, or for
DC-DC conversion applications.
APPLICATIONS
Battery Powered System
DC/DC Buck Converter
Load Switch
Cell Phone
FEATURES
P-Channel
-20V/-3.4A,R
DS(ON)
= 90mΩ@V
GS
=-4.5V
-20V/-2.4A,R
DS(ON)
=120mΩ@V
GS
=-2.5V
-20V/-1.7A,R
DS(ON)
=155mΩ@V
GS
=-1.8V
Schottky
VKA (V) = 20V, IF = 1A, VF<0.43V@1.0A
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
DFN3X2-8L package design
PIN CONFIGURATION( DFN3X2 – 8L )
PART MARKING
2008/05/15
Ver.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
