SPC6602
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6602 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
30V/2.8A,R
DS(ON)
= 60mΩ@V
GS
=10V
30V/2.3A,R
DS(ON)
= 80mΩ@V
GS
=4.5V
P-Channel
-30V/-2.8A,R
DS(ON)
=105mΩ@V
GS
=- 10V
-30V/-2.5A,R
DS(ON)
=135mΩ@V
GS
=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2006/03/20
Ver.3
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
