SPC6605
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6605 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
20V/3.6A,R
DS(ON)
=97mΩ@V
GS
=4.5V
20V/3.1A,R
DS(ON)
=113mΩ@V
GS
=2.5V
P-Channel
-20V/-2.4A,R
DS(ON)
= 128mΩ@V
GS
=-4.5V
-20V/-2.0A,R
DS(ON)
=188mΩ@V
GS
=-2.5V
Super high density cell design for extremely low
RDS (ON)
TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2011/8/1
Preliminary
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
