SPN1026
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1026 is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide rugged, reliable, and fast switching
performance. They can be used in most applications
requiring up to 320mA DC and can deliver pulsed
currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
FEATURES
60V/0.50A , R
DS(ON)
= 5.0Ω@V
GS
=10V
60V/0.30A , R
DS(ON)
= 5.5Ω@V
GS
=5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 / SC-89-6L package design
PIN CONFIGURATION( SOT-563 / SC-89-6L )
PART MARKING
2010/05/25
Ver.2
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
