SPN1304
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1304 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/2.0A,R
DS(ON)
=225mΩ@V
GS
=4.5V
20V/1.5A,R
DS(ON)
=315mΩ@V
GS
=2.5V
20V/1.0A,R
DS(ON)
=425mΩ@V
GS
=1.8V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2007/12/18
Ver.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
