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SPN2302AS23RG 参数 Datasheet PDF下载

SPN2302AS23RG图片预览
型号: SPN2302AS23RG
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 207 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
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SPN2302A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302A is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
20V/4.0A,R
DS(ON)
=75mΩ@V
GS
=4.5V
20V/3.4A,R
DS(ON)
=95mΩ@V
GS
=2.5V
20V/2.8A,R
DS(ON)
=135mΩ@V
GS
=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2007/06/25
Ver.1
Page 1