SPN2302D
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T =25℃ Unless otherwise noted)
A
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
(BR)DSS
GS(th)
V
V
V
GS=0V,I
D
=250uA
20
V
V
DS=VGS,I
D=250uA
0.45
1.2
Gate Leakage Current
IGSS
DS=0V,VGS=±12V
DS=20V,VGS=0V
DS=20V,VGS=0V
=55℃
±100
1
nA
uA
V
V
Zero Gate Voltage Drain Current
IDSS
10
T
J
V
V
V
V
DS≧5V,VGS=4.5V
DS≧5V,VGS=2.5V
6
4
On-State Drain Current
I
D(on)
A
GS=4.5V,I
D
=3.6A
=3.1A
0.085
0.100
0.097
0.113
Drain-Source On-Resistance
R
DS(on)
Ω
GS=2.5V,I
D
Forward Transconductance
Diode Forward Voltage
gfs
V
DS=5V,I
D
=3.6A
10
S
V
SD
IS
=1.6A,VGS=0V
0.85
1.2
10
V
Dynamic
Total Gate Charge
Qg
5.4
0.65
1.4
340
115
33
V
DS=10V,VGS=4.5V
≡3.6A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Q
gs
ID
Q
gd
iss
oss
rss
d(on)
C
V
DS=10V,VGS=0V
Output Capacitance
Reverse Transfer Capacitance
C
f=1MHz
C
t
12
25
60
60
25
Turn-On Time
Turn-Off Time
V
DD=10V,R
≡3.6A,VGEN=4.5V
=6Ω
L=5.5Ω
t
r
36
ID
ns
t
d(off)
34
RG
t
f
10
2012/08/06 Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
