SPN2318
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2318 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
40V/3.9A,R
DS(ON)
= 56mΩ@V
GS
=10V
40V/3.5A,R
DS(ON)
= 62mΩ@V
GS
=4.5V
40V/2.0A,R
DS(ON)
= 95 mΩ@V
GS
= 2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION ( SOT-23-3L )
PART MARKING
2009/07/15
Ver.1
Page 1