SPN3006
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3006 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPN3006 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
30V/30A,R
DS(ON)
= 4.7mΩ@V
GS
=10V
30V/15A,R
DS(ON)
= 7.5mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
APPLICATIONS
High Frequency Synchronous Buck Converter
DC/DC Power System
Load Switch
PIN CONFIGURATION
TO-252
PART MARKING
2011/08/22
Ver.2
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
