SPN4402B
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4402B is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
30V/12A,R
DS(ON)
= 15mΩ@V
GS
= 10V
30V/10A,R
DS(ON)
= 18mΩ@V
GS
= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/12/ 15
Ver.1
Page 1