SPN6435
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS
=0V,I
D
=150uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
V
DS
=0V,V
GS
=±20V
V
DS
=40V,V
GS
=0V
V
DS
=40V,V
GS
=0V
T
J
=125℃
V
GS
=10V,I
D
=0.3A
V
GS
= 5V,I
D
=0.2A
V
GS
= 2.5V,I
D
=0.02A
V
DS
= 10 V, I
D
= 0.5 A
40
1.0
1.3
±100
1
10
2.8
3.2
7.5
0.6
0.85
4.0
5.0
10.0
1.5
V
nA
uA
Symbol
Conditions
Min.
Typ
Max.
Unit
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
R
DS(on)
Gfs(1)
Ω
S
V
V
SD
(1) V
GS
= 0 V, I
S
= 0.12A
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 5 V
1.4
0.8
0.5
43
20
6
5
2.0
nC
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
pF
V
DD
= 30 V, I
D
= 0.5 A
R
G
= 4.7Ω V
GS
= 4.5 V
15
7
8
ns
(1) Pulsed: Pulse duration = 300
μs,
duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
2007/04/25
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
