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SPN6561_09 参数 Datasheet PDF下载

SPN6561_09图片预览
型号: SPN6561_09
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型MOSFET [Dual N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 182 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6561 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
30V/2.8A,R
DS(ON)
= 60mΩ@V
GS
=10V
30V/2.3A,R
DS(ON)
= 80mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-6L package design
PIN CONFIGURATION( SOT-23-6L )
PART MARKING
2009/12/05
Ver.2
Page 1