SPN7002T
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, I
D
= 0.6 A
R
G
= 3.3Ω V
GS
= 10.0 V
R
D
= 52Ω
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
V
DD
= 50 V, I
D
= 0.6 A,
V
GS
= 4.5 V
1.0
0.5
0.5
32
8
6
12
10
56
29
ns
50
pF
1.6
nC
V
(BR)DSS
V
GS
=0V,I
D
=250Ua
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
R
DS(on)
Gfs(1)
V
DS
=0V,V
GS
=±20V
V
DS
=60V,V
GS
=0V
T
J
=25℃
V
DS
=48V,V
GS
=0V
T
J
=70℃
V
GS
=10V,I
D
=0.50A
V
GS
= 4.5V,I
D
=0.20A
V
DS
= 10 V, I
D
= 0.6 A
60
1.0
1.7
2.5
±30
10
uA
100
2.0
4.0
0.6
1.2
Ω
S
V
V
uA
Symbol
Conditions
Min.
Typ
Max.
Unit
V
SD
(1) V
GS
= 0 V, I
S
= 1.2A
(1) Pulsed: Pulse duration = 300
μs,
duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
2009/11/10
Ver.1
Page 3