欢迎访问ic37.com |
会员登录 免费注册
发布采购

SPN7002LS23RG 参数 Datasheet PDF下载

SPN7002LS23RG图片预览
型号: SPN7002LS23RG
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 256 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
 浏览型号SPN7002LS23RG的Datasheet PDF文件第2页浏览型号SPN7002LS23RG的Datasheet PDF文件第3页浏览型号SPN7002LS23RG的Datasheet PDF文件第4页浏览型号SPN7002LS23RG的Datasheet PDF文件第5页浏览型号SPN7002LS23RG的Datasheet PDF文件第6页浏览型号SPN7002LS23RG的Datasheet PDF文件第7页浏览型号SPN7002LS23RG的Datasheet PDF文件第8页浏览型号SPN7002LS23RG的Datasheet PDF文件第9页  
SPN7002L
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7002L is the N-Channel enhancement mode
field effect transistors are produced using high cell
density DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to
300mA DC and can deliver pulsed currents up to 0.8A.
These products are particularly suited for low voltage,
low current applications such as small servo motor
control, power MOSFET gate drivers, and other
switching applications.
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
FEATURES
50V/0.30A , R
DS(ON)
= 3.5Ω@V
GS
=10V
50V/0.25A , R
DS(ON)
= 5.5Ω@V
GS
=4.5V
50V/0.05A , R
DS(ON)
= 7.5Ω@V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
2009/03/10
Ver.1
Page 1