SPN80T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN80T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN80T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
100V/85A, R
DS(ON)
=7.1mΩ@V
GS
= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-220 package design
APPLICATIONS
Powered System
DC/DC Converter
Load Switch
PIN CONFIGURATION
TO-220
PART MARKING
2013/10/29
Ver.1
Page 1