SPN8457
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8457 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
30V/5.5A,R
DS(ON)
= 58mΩ@V
GS
=10V
30V/4.0A,R
DS(ON)
= 98mΩ@V
GS
=4.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-223 package design
APPLICATIONS
Power Management in Note book
DC/DC Converter
LCD Display inverter
PIN CONFIGURATION(SOT-223)
PART MARKING
2007/ 08 / 01
Ver.1
Page 1