SPN8822
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION
The SPN8822 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .
FEATURES
20V/8.0A,R
DS(ON)
= 24mΩ@V
GS
= 4.5V
20V/7.0A,R
DS(ON)
= 32mΩ@V
GS
= 2.5V
20V/3.0A,R
DS(ON)
= 42mΩ@V
GS
= 1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSSOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2007/04/23
Ver.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
