SPN8878
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8878 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
30V/20A,R
DS(ON)
= 12mΩ@V
GS
=10V
30V/15A,R
DS(ON)
= 17mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
APPLICATIONS
Power Management in Note book
Powered System
DC/DC Converter
Load Switch
PIN CONFIGURATION
TO-252
PART MARKING
2009/04/30
Ver.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
