SPN8878B
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878B is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. The
SPN8878B has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
FEATURES
30V/20A,R
DS(ON)
= 14mΩ@V
GS
=10V
30V/15A,R
DS(ON)
= 19mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 and TO-251 package design
APPLICATIONS
Power Management in Note book
Powered System
DC/DC Converter
Load Switch
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
TO-252
TO-251
2011/09/27
Ver.5
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
