SPN8919
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8919 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
100V/2A, R
DS(ON)
= 180mΩ@V
GS
= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-89 package design
APPLICATIONS
High Frequency Small Power Switching for
MB/NB/VGA
Network DC/DC Power System
Load Switch
PIN CONFIGURATION
SOT-89
G
D
S
1
2
3
PART MARKING
2012/07/26
V.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
