SPN9926A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10V,R
L
=6Ω
I
D
≡1.0A,V
GEN
=4.5V
R
G
=6Ω
V
DS
=8V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=55℃
V
DS
≦5V,V
GS
=4.5V
V
GS
=4.5V,I
D
=6.0A
V
GS
=2.5V,I
D
=5.0A
V
DS
=5V,I
D
=-3.6A
I
S
=1.7A,V
GS
=0V
20
0.6
±100
1
5
6
0.024
0.032
10
0.8
2
2.5
2.1
575
84
22
10
16
35
3
14
20
40
10
0.030
0.042
1.2
V
nA
uA
A
Ω
S
V
V
DS
=10V, V
GS
=4.5V,
I
D
=6.0A
nC
pF
ns
2007/ 06 / 20
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
