SPN9926
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN9926 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
20V/5.0A,R
DS(ON)
=50mΩ@V
GS
=4.5V
20V/4.0A,R
DS(ON)
=65mΩ@V
GS
=2.5V
20V/2.8A,R
DS(ON)
=90mΩ@V
GS
=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2007/ 06 / 08
Ver.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
