SPP1413A
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T =25℃ Unless otherwise noted)
A
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
(BR)DSS
GS(th)
V
V
V
GS=0V,I
D
=-250uA
-20
V
V
DS=VGS,I
D=-250uA
-0.35
-0.8
Gate Leakage Current
IGSS
DS=0V,VGS=±12V
DS=-20V,VGS=0V
DS=-20V,VGS=0V
±100
-1
nA
uA
V
V
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
-5
T
J
=55℃
V
DS≦-5V,VGS=-4.5V
ID(on)
-6
A
V
V
V
GS=-4.5V,I
GS=-2.5V,I
GS=-1.8V,I
D=-3.4A
D=-2.4A
D=-1.7A
0.110
0.130
0.170
0.130
0.150
0.190
Drain-Source On-Resistance
R
DS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
V
DS=-5V,I
D
=-2.8A
6
S
V
SD
IS
=-1.5A,VGS=0V
-0.8
-1.2
8
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
4.8
1.0
1.0
485
85
V
DS=-6V,VGS=-4.5V
≡-2.8A
nC
pF
Q
gs
ID
Q
gd
iss
oss
rss
d(on)
C
V
DS=-6V,VGS=0V
C
f=1MHz
C
40
t
10
16
23
25
20
Turn-On Time
Turn-Off Time
V
DD=-6V,R
≡-1.0A,VGEN=-4.5V
=6Ω
L
=6Ω
t
r
13
ID
ns
t
d(off)
18
RG
t
f
15
2012/08/07 Ver.4
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
