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SPP2301DS23RG 参数 Datasheet PDF下载

SPP2301DS23RG图片预览
型号: SPP2301DS23RG
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 211 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
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SPP2301D
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2301D is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-20V/-2.4A,R
DS(ON)
=128mΩ@V
GS
=-4.5V
-20V/-2.0A,R
DS(ON)
=188mΩ@V
GS
=-2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
2011/10/25
Ver.3
Page 1