SPP2309
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2309 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
P-Channel
-20V/2.5A,R
DS(ON)
= 0.35Ω@V
GS
=-4.5V
-20V/1.5A,R
DS(ON)
= 0.48Ω@V
GS
=-2.5V
-20V/0.7A,R
DS(ON)
= 0.75Ω@V
GS
=-1.8V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2008/01/08
Ver.1
Page 1